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IRFD210 MOSFET Transistor

The IRFD210 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD210 transistor as follows.

Circuit diagram symbol of the IRFD210 transistor

IRFD210 Transistor Specification

Transistor Code IRFD210
Transistor Type MOSFET
Control Channel Type N-Channel
Package HEXDIP
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 140pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 8.2nC

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