IRFD123PBF MOSFET Transistor

The IRFD123PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD123PBF transistor as follows.

IRFD123PBF Transistor Specification

Transistor Code		IRFD123PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIP-4
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		16nC

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