IRFD020PBF MOSFET Transistor

The IRFD020PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD020PBF transistor as follows.

IRFD020PBF Transistor Specification

Transistor Code		IRFD020PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIP-4
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		16nC

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