IRFD012 MOSFET Transistor

The IRFD012 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD012 transistor as follows.

IRFD012 Transistor Specification

Transistor Code		IRFD012
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIP-4
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.8nC

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