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IRFBL12N50A MOSFET Transistor

The IRFBL12N50A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFBL12N50A transistor as follows.

Circuit diagram symbol of the IRFBL12N50A transistor

IRFBL12N50A Transistor Specification

Transistor Code IRFBL12N50A
Transistor Type MOSFET
Control Channel Type N-Channel
Package SUPERD2PAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 180W
Operating Junction Temperature (Maximum) 150°C

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