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IRFBG20PBF MOSFET Transistor

The IRFBG20PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFBG20PBF transistor as follows.

Circuit diagram symbol of the IRFBG20PBF transistor

IRFBG20PBF Transistor Specification

Transistor Code IRFBG20PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 11Ohm
Power Dissipation (Maximum) PD 54W
Drain-Source Capacitance 52pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 38nC

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