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IRFBC30PBF MOSFET Transistor

The IRFBC30PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFBC30PBF transistor as follows.

Circuit diagram symbol of the IRFBC30PBF transistor

IRFBC30PBF Transistor Specification

Transistor Code IRFBC30PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.2Ohm
Power Dissipation (Maximum) PD 74W
Drain-Source Capacitance 86pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 31nC

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