IRFBA35N60C MOSFET Transistor

The IRFBA35N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFBA35N60C transistor as follows.

IRFBA35N60C Transistor Specification

Transistor Code		IRFBA35N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPER220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		150°C

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