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IRFBA1405P MOSFET Transistor

The IRFBA1405P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFBA1405P transistor as follows.

Circuit diagram symbol of the IRFBA1405P transistor

IRFBA1405P Transistor Specification

Transistor Code IRFBA1405P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO273AA_SUPER-220
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 174A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.005Ohm
Power Dissipation (Maximum) PD 330W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 170nC

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