IRFB9N65A MOSFET Transistor

The IRFB9N65A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB9N65A transistor as follows.

IRFB9N65A Transistor Specification

Transistor Code		IRFB9N65A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	8.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	167W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		48nC

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