IRFB7530 MOSFET Transistor

The IRFB7530 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB7530 transistor as follows.

IRFB7530 Transistor Specification

Transistor Code		IRFB7530
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	295A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1266pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		141nS
Gate-Threshold Voltage (Maximum)		3.7V
Total Gate Charge		274nC

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