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IRFB61N15DPBF MOSFET Transistor

The IRFB61N15DPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB61N15DPBF transistor as follows.

Circuit diagram symbol of the IRFB61N15DPBF transistor

IRFB61N15DPBF Transistor Specification

Transistor Code IRFB61N15DPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.032Ohm
Power Dissipation (Maximum) PD 330W
Drain-Source Capacitance 690pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 110nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 95nC

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