IRFB5615 MOSFET Transistor

The IRFB5615 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB5615 transistor as follows.

IRFB5615 Transistor Specification

Transistor Code		IRFB5615
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	144W
Total Gate Charge		26nC

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