IRFB4229PBF MOSFET Transistor

The IRFB4229PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4229PBF transistor as follows.

IRFB4229PBF Transistor Specification

Transistor Code		IRFB4229PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.046Ohm
Power Dissipation (Maximum)	PD	330W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		72nC

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