IRFB4215PBF MOSFET Transistor

The IRFB4215PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4215PBF transistor as follows.

IRFB4215PBF Transistor Specification

Transistor Code		IRFB4215PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	270W
Drain-Source Capacitance		840pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		160nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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