IRFB4212PBF MOSFET Transistor

The IRFB4212PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4212PBF transistor as follows.

IRFB4212PBF Transistor Specification

Transistor Code		IRFB4212PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0725Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		66pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		15nC

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