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IRFB4137PBF MOSFET Transistor

The IRFB4137PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4137PBF transistor as follows.

Circuit diagram symbol of the IRFB4137PBF transistor

IRFB4137PBF Transistor Specification

Transistor Code IRFB4137PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220PAK
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 38A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.069Ohm
Power Dissipation (Maximum) PD 341W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 83nC

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