IRFB4019PBF MOSFET Transistor

The IRFB4019PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4019PBF transistor as follows.

IRFB4019PBF Transistor Specification

Transistor Code		IRFB4019PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.095Ohm
Power Dissipation (Maximum)	PD	80W
Drain-Source Capacitance		74pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		4.9V
Total Gate Charge		13nC

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