IRFB3306GPBF MOSFET Transistor

The IRFB3306GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3306GPBF transistor as follows.

IRFB3306GPBF Transistor Specification

Transistor Code		IRFB3306GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		76nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		85nC

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