IRFB3256 MOSFET Transistor

The IRFB3256 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3256 transistor as follows.

IRFB3256 Transistor Specification

Transistor Code		IRFB3256
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	206A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0034Ohm
Power Dissipation (Maximum)	PD	300W
Total Gate Charge		130nC

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