IRFB3077GPBF MOSFET Transistor

The IRFB3077GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3077GPBF transistor as follows.

IRFB3077GPBF Transistor Specification

Transistor Code		IRFB3077GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0033Ohm
Power Dissipation (Maximum)	PD	370W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		87nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		160nC

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