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IRFB3006PBF MOSFET Transistor

The IRFB3006PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3006PBF transistor as follows.

Circuit diagram symbol of the IRFB3006PBF transistor

IRFB3006PBF Transistor Specification

Transistor Code IRFB3006PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 195A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0025Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 1020pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 182nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 200nC

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