IRFB3006GPBF MOSFET Transistor

The IRFB3006GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3006GPBF transistor as follows.

IRFB3006GPBF Transistor Specification

Transistor Code		IRFB3006GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	195A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1020pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		182nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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