IRFB3004GPBF MOSFET Transistor

The IRFB3004GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3004GPBF transistor as follows.

IRFB3004GPBF Transistor Specification

Transistor Code		IRFB3004GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	195A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00175Ohm
Power Dissipation (Maximum)	PD	380W
Drain-Source Capacitance		2020pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		220nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		160nC

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