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IRFB260NPBF MOSFET Transistor

The IRFB260NPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB260NPBF transistor as follows.

Circuit diagram symbol of the IRFB260NPBF transistor

IRFB260NPBF Transistor Specification

Transistor Code IRFB260NPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 56A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 380W
Drain-Source Capacitance 580pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 64nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 150nC

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