IRFB260NPBF MOSFET Transistor

The IRFB260NPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB260NPBF transistor as follows.

IRFB260NPBF Transistor Specification

Transistor Code		IRFB260NPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	380W
Drain-Source Capacitance		580pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		64nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		150nC

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