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IRFB23N20DPBF MOSFET Transistor

The IRFB23N20DPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB23N20DPBF transistor as follows.

Circuit diagram symbol of the IRFB23N20DPBF transistor

IRFB23N20DPBF Transistor Specification

Transistor Code IRFB23N20DPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 170W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 57nC

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