IRFB17N60K MOSFET Transistor

The IRFB17N60K is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB17N60K transistor as follows.

IRFB17N60K Transistor Specification

Transistor Code		IRFB17N60K
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.42Ohm
Power Dissipation (Maximum)	PD	340W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		82nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		99nC

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