IRFB17N50LPBF MOSFET Transistor

The IRFB17N50LPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB17N50LPBF transistor as follows.

IRFB17N50LPBF Transistor Specification

Transistor Code		IRFB17N50LPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.32Ohm
Power Dissipation (Maximum)	PD	220W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		51nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		130nC

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