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IRFB17N50L MOSFET Transistor

The IRFB17N50L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB17N50L transistor as follows.

Circuit diagram symbol of the IRFB17N50L transistor

IRFB17N50L Transistor Specification

Transistor Code IRFB17N50L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.32Ohm
Power Dissipation (Maximum) PD 220W
Drain-Source Capacitance 325pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 51nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 130nC

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