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IRFAF50 MOSFET Transistor

The IRFAF50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFAF50 transistor as follows.

Circuit diagram symbol of the IRFAF50 transistor

IRFAF50 Transistor Specification

Transistor Code IRFAF50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.6Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 500pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 66nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 180nC

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