IRF9Z34PBF MOSFET Transistor

The IRF9Z34PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9Z34PBF transistor as follows.

IRF9Z34PBF Transistor Specification

Transistor Code		IRF9Z34PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	88W
Drain-Source Capacitance		620pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		34nC

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