IRF9Z34NLPBF MOSFET Transistor

The IRF9Z34NLPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9Z34NLPBF transistor as follows.

IRF9Z34NLPBF Transistor Specification

Transistor Code		IRF9Z34NLPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	68W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		35nC

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