IRF9Z25 MOSFET Transistor

The IRF9Z25 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9Z25 transistor as follows.

IRF9Z25 Transistor Specification

Transistor Code		IRF9Z25
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	8.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.33Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C

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