IRF9Z24SPBF MOSFET Transistor

The IRF9Z24SPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9Z24SPBF transistor as follows.

IRF9Z24SPBF Transistor Specification

Transistor Code		IRF9Z24SPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

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