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IRF9Z14L MOSFET Transistor

The IRF9Z14L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9Z14L transistor as follows.

Circuit diagram symbol of the IRF9Z14L transistor

IRF9Z14L Transistor Specification

Transistor Code IRF9Z14L
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-262
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 43W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 63nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 12nC

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