IRF9953 MOSFET Transistor

The IRF9953 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9953 transistor as follows.

IRF9953 Transistor Specification

Transistor Code		IRF9953
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		6.1nC

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