IRF9952QPBF MOSFET Transistor

The IRF9952QPBF is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9952QPBF transistor as follows.

IRF9952QPBF Transistor Specification

Transistor Code		IRF9952QPBF
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.8nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		6.9nC

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