IRF9530PBF MOSFET Transistor

The IRF9530PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9530PBF transistor as follows.

IRF9530PBF Transistor Specification

Transistor Code		IRF9530PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	88W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		52nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		38nC

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