IRF9530N MOSFET Transistor

The IRF9530N is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9530N transistor as follows.

IRF9530N Transistor Specification

Transistor Code		IRF9530N
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	79W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		38.7nC

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