IRF9362PBF MOSFET Transistor

The IRF9362PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9362PBF transistor as follows.

IRF9362PBF Transistor Specification

Transistor Code		IRF9362PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.9nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		13nC

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