IRF9333PBF MOSFET Transistor

The IRF9333PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9333PBF transistor as follows.

IRF9333PBF Transistor Specification

Transistor Code		IRF9333PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0194Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		14nC

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