IRF9332PBF MOSFET Transistor

The IRF9332PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9332PBF transistor as follows.

IRF9332PBF Transistor Specification

Transistor Code		IRF9332PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0175Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		14nC

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