IRF9317PBF MOSFET Transistor

The IRF9317PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9317PBF transistor as follows.

IRF9317PBF Transistor Specification

Transistor Code		IRF9317PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0066Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		64nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		31nC

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