IRF9310PBF MOSFET Transistor

The IRF9310PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9310PBF transistor as follows.

IRF9310PBF Transistor Specification

Transistor Code		IRF9310PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0046Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		58nC

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