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IRF9310PBF-1 MOSFET Transistor

The IRF9310PBF-1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9310PBF-1 transistor as follows.

Circuit diagram symbol of the IRF9310PBF-1 transistor

IRF9310PBF-1 Transistor Specification

Transistor Code IRF9310PBF-1
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0046Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 1300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 47nS
Gate-Threshold Voltage (Maximum) 2.4V
Total Gate Charge 58nC

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