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IRF9131 MOSFET Transistor

The IRF9131 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9131 transistor as follows.

Circuit diagram symbol of the IRF9131 transistor

IRF9131 Transistor Specification

Transistor Code IRF9131
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 450pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 140nS
Gate-Threshold Voltage (Maximum) 4V

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