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IRF9130 MOSFET Transistor

The IRF9130 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9130 transistor as follows.

Circuit diagram symbol of the IRF9130 transistor

IRF9130 Transistor Specification

Transistor Code IRF9130
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.35Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 860pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 29nC

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