IRF9130 MOSFET Transistor

The IRF9130 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9130 transistor as follows.

IRF9130 Transistor Specification

Transistor Code		IRF9130
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		860pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		29nC

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