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IRF8910G MOSFET Transistor

The IRF8910G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8910G transistor as follows.

Circuit diagram symbol of the IRF8910G transistor

IRF8910G Transistor Specification

Transistor Code IRF8910G
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0134Ohm
Power Dissipation (Maximum) PD 2W

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