IRF8852PBF MOSFET Transistor

The IRF8852PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8852PBF transistor as follows.

IRF8852PBF Transistor Specification

Transistor Code		IRF8852PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0113Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		295pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.9nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		9.5nC

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