IRF8714GPBF MOSFET Transistor

The IRF8714GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8714GPBF transistor as follows.

IRF8714GPBF Transistor Specification

Transistor Code		IRF8714GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0087Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.9nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		8.1nC

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